Green light-emitting diode based on graphene-ZnO nanowire van der Waals heterostructure
| Zhiqian WU1,2,Yue SHEN2,*,Xiaoqiang LI1,3,Qing YANG3,Shisheng LIN1,3,* |
1. College of Microelectronics, College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, China
2. State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China
3. State Key Laboratory of Modern Optical Instrumentation, Zhejiang University, Hangzhou 310027, China |
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Abstract
The rectifying behavior between graphene and semiconductors makes novel type of solar cells, photodetectors and light emitting diodes (LEDs). The interface between graphene and ZnO is the key for the performance of the optoelectronic devices. Herein, we find that green light emission is very strong for the forward biased graphene/ZnO nanowire van der Waals heterostructure. We correlated the green light emission with the surface defects locating at the ZnO nanowire surface through the detailed high resolution transmission electron microscopy and photoluminescence measurements. We pointed out engineering the surface of ZnO nanowires could bring a dimension of designing graphene/ZnO LEDs, which could be extended to other types of graphene/semiconductor heterostructure based optoelectronic devices.
| Cite this article: |
| Zhiqian WU,Yue SHEN,Xiaoqiang LI, et al. Green light-emitting diode based on graphene-ZnO nanowire van der Waals heterostructure[J]. Front. Optoelectron., 18 February 2016. [Epub ahead of print] doi: 10.1007/s12200-016-0596-1. |
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