Development trends of GaN-based wide bandgap semiconductors: from solid state lighting to power electronic devices

Bo SHEN()

Research Center for Wide Bandgap Semiconductors and State Key Laboratory of Artificial Microstructures and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China

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Bo SHEN. Development trends of GaN-based wide bandgap semiconductors: from solid state lighting to power electronic devices[J]. Front. Optoelectron., 01 September 2015. [Epub ahead of print] doi: 10.1007/s12200-015-0459-1.