Performance improvement by enhancing the well-barrier hole burning in a quantum well semiconductor optical amplifier
| Tong CAO,Xinliang ZHANG* |
| Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China |
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| Abstract In this paper, we demonstrated a novel physical mechanism based on the well-barrier hole burning enhancement in a quantum well (QW) semiconductor optical amplifier (SOA) to improve the operation performance. To completely characterize the physical mechanism, a complicated theoretical model by combining QW band structure calculation with SOA’s dynamic model was constructed, in which the carrier transport, interband effects and intraband effects were all taken into account. The simulated results showed optimizing the thickness of the separate confinement heterostructure (SCH) layer can effectively enhance the well-barrier hole burning, further enhance the nonlinear effects in SOA and reduce the carrier recovery time. At the optimal thickness, the SCH layer can store enough carrier numbers, and simultaneously the stored carriers can also be fast and effectively injected into the QWs.Keywords nonlinear optics optical signal processing semiconductor optical amplifier (SOA) Corresponding Authors: Xinliang ZHANG Just Accepted Date: 19 August 2016 Online First Date: 12 September 2016 Issue Date: 28 September 2016 |
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| Cite this article: |
| Tong CAO,Xinliang ZHANG. Performance improvement by enhancing the well-barrier hole burning in a quantum well semiconductor optical amplifier[J]. Front. Optoelectron., 2016, 9(3): 353-361. |
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