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| Jun HAN1, Ying ZHOU2, Yang Tian3, Ziheng HUANG4, Xiaohua WANG1*, Jie ZHONG2, Zhe XIA2, Bo YANG2, Haisheng SONG2, Jiang TANG2* |
| 1. School of Science, Changchun University of Science and Technology, Changchun 130022, China; 2. Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology, Wuhan 430074, China; 3. Department of Environmental Science, College of Environmental Sciences, Minzu University of China, Beijing 100081, China; 4. School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China |
Abstract
Copper tin sulfide (Cu2SnS3) was a potential earth abundant absorber material for photovoltaic device application. In this contribution, triclinic Cu2SnS3 film with phase pure composition and large grain size was fabricated from a hydrazine solution process using Cu, Sn and S as the precursors. Absorption measurement revealed this Cu2SnS3 film had a direct optical band gap of 0.88 eV, and Hall effect measurement indicated the film was p-type with hole mobility of 0.86 cm2/Vs. Finally Mo/Cu2SnS3/CdS/ZnO/AZO/Au was produced and the best device efficiency achieved was 0.78%. Also, this device showed improved device performance during ambient storage. This study laid some foundation for the further improvement of Cu2SnS3solar cell.
| Cite this article: |
| Jun HAN,Ziheng HUANG,Xiaohua WANG, et al. Hydrazine processed Cu2SnS3 thin film and their application for photovoltaic devices[J]. Front Optoelec, 2014, 7(1): 37-45. |
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