Hole-transporting layer-free inverted planar mixed lead-tin perovskite-based solar cells

Yuqin LIAO1,2,3, Xianyuan JIANG2,3, Wenjia ZHOU2, Zhifang SHI2,3, Binghan LI2,3, Qixi MI2, Zhijun NING2()

1. Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China 2. School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China 3. University of Chinese Academy of Sciences, Beijing 100049, China

Abstract

Mixed lead-tin (Pb-Sn) perovskites present a promising strategy to extend the light-harvesting range of perovskite-based solar cells (PSCs). The use of electron-transporting layer or hole-transporting layer (HTL) is critical to achieve high device efficiency. This strategy, however, requires tedious layer-by-layer fabrication as well as high-temperature annealing for certain oxides. In this work, we fabricated HTL-free planar FAPb0.5Sn0.5I3 PSCs with the highest efficiency of 7.94%. High short-circuit current density of 23.13 mA/cm2 was attained, indicating effective charge extraction at the ITO/FAPb0.5Sn0.5I3 interface. This finding provides an alternative strategy to simplify the manufacture of single-junction or tandem PSCs.

Keywords solar cell perovskite hole-transporting layer (HTL) interface engineering