The device principle of photoconductors

时   间：2020年11月2日（星期一）  16:00~17:30

地   点：腾讯会议   835 496 555    

报告人：Yaping Dan (但亚平)  

单位：UM-SJTU Joint Institute, Shanghai Jiao Tong University 上海交通大学密西根学院

邀请人：唐江  教授

报告摘要：

Photoconductors as the simplest photodetectors have been extensively investigated on various semiconducting materials in the past 60 years including thin films, nanowires, quantum dots, and more recently twodimensional (2D) atomic layers. The persistent research interests in photoconductors for decades are mainly driven by the extraordinarily high gain in quantum efficiency (up to 1010) observed in these photoconductors. However, the device principle of these photoconductors is still poorly understood after decades of research. In this talk, I will present the research findings of my group in this filed in the past few years. I will first elaborate our finding that the classical device principle of photoconductors is derived on two misplaced assumptions. We then found a new device model for high-gain phtoconductors based on photo Hall effect measurements. From the device model, we established explicit gain equations for high-gain photoconductors that fit the experimental data well. In the end, we further derived the analytical transient photoresponses for high-gain photoconductors. These research findings offer us a better understanding of high-gain phtoconductors and allow us to quantiatively design photoconductors in terms of photogain, bandwidth and dark current.

报告人简介：

但亚平教授于1999年获西安交通大学学士学位、2002年获清华大学硕士学位、2008年获美国宾夕法尼亚大学博士学位。博士毕业后，在美国哈佛大学任博士后和博士后研究员，2012年加入上海交大密西根学院。选后入选国家高端人才计划、上海市浦江人才计划。主要研究单原子电子学和硅基光电子，以通讯作者或第一作者在《自然通讯》、《Nano Letters》、《ACS Nano》等期刊发表论文50多篇。